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September 2021

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IPFA 2021 is devoted to the fundamental understanding of the electrical and physical characterization techniques and associated technologies that assist in probing the nature of wear-out and failure in conventional and new CMOS devices. This will, in turn, result in improved know-how of the physics of device / circuit / module failure that serves as a critical input for future design for reliability. The Technical Program Committee is inviting papers related, but not limited to, the following areas:

(SPECIAL AI SESSION) Emerging Topics in Failure Analysis and Reliability: New FA Techniques, FA for hardware security, Artificial intelligence (AI) for FA – fault detection, Visual / image analytics, Pattern recognition, Machine learning for prognosis and reliability. Exploring reliability assessment and quantification for  new applications – neuromorphic devices, PUF circuits etc.

Product Test and Diagnostic: Embedded BIST and DFT test  and diagnosis, Reliability testing, Silicon failure debug on test and yield engineering methodologies, Yield analysis and optimization, Defect-oriented testing, Protocol-aware testing, Test-to-Design Feedback, Mixed signal and analog tests.

Photonics Device (Display, Lighting and Photovoltaic) Reliability and Failure AnalysisDegradation studies on display modules, LED, Solar cells made of silicon, CdTe, CIGS, organic materials, multi-junction, perovskite etc., Infrared photodetectors, Waveguides.

Sample Preparation, Metrology and Defect CharacterizationDevice de-processing, Ion beam / TEM sample preparation, Metrology, Defect inspection, Test chips.

Case Studies on Fault Isolation: Die / Board / System-level electrical FA, Electrical characterization and nanoprobing.

Case Studies on Physical Failure Analysis: Die / Board / System-level physical FA, Design for manufacturing, Construction Analysis, Reverse engineering.

Package-Level Failure Analysis: 2.xD/3D/SiP Package FA, Magnetic/acoustic applications, 2.xD/3D X-ray, Lock-in thermography, FTIR, Non-destructive failure analysis, Workflows.

Advanced Electrical Fault Isolation Techniques: Advanced methodologies in photon and laser-based microscopy techniques, Dynamic techniques, Acoustic microscopy, Magnetic imaging, Nanoprobing, AFP, EBAC/EBIC.

Advanced Physical Failure Analysis Techniques: Advanced methodologies in PFA, Advanced optical/Ion beam approaches, Plasma/Laser FIB, Spectroscopy (EDX/EELS) techniques, Scanning probe microscopy, Circuit-edits, De-layering recipes and innovations, Tomography.

Transistor and NVM Reliability: Gate oxide/High-κ reliability, PBTI/NBTI, Hot carrier, Random telegraph noise and single dopant effects, Self Heating in sub-10 nm CMOS, GAA FET / RFSOI/ HBM/stack DRAM device reliability, Process and stress-induced reliability issues and variability, Non-volatile memory reliability – retention, endurance and read disturb in PCRAM, RRAM, STT- MRAM, Reliability of ferroelectric devices.

ESD, Latchup and Reliability for Space Applications: Component and system level ESD design: modeling and  simulation, Neutron and alpha particle single event radiation, Multi- bit SER/SEU.

Interconnect and Packaging Reliability: TDDB dielectrics, Electromigration, stress migration, cracking, corrosion, and fatigue in bond pads, Reliability of 3DIC/ TSV/ MEMS, Heterogeneous Integration in SiP, Thermo-mechanical stress, Power dissipation issues, Wafer warpage, Wire bonding, Die attach and  encapsulation issues, Wafer bonding technology, yield & reliability.

High Power Electronics / Wide Bandgap Device Reliability & Failure Analysis: Reliability of devices based on GaAs, GaN, SiC and Ga2O3 systems, Trap-related degradation, Materials-related defect characterization, Process variability, III-V/Si integration.

2D Materials and Devices: Reliability & Failure Analysis: Tunnel FETs, Transistors with 2D materials (Graphene, MoS2, WSe2, h-BN), Ferroelectric and negative capacitance FETs, Quantum computing, Spintronics.



Prospective authors are requested to submit at least a two-page abstract (including text and figures) of their previously unpublished and original research work. The two-page abstract should include the following:

  1. Brief introduction to the background and motivation/objectives of the work.
  2. Experimental results, analysis and discussion.
  3. Summary of the findings, highlighting their impact, novelty and importance.
  4. Supporting figures, tables, and references.

All submissions must be in English. The materials in the paper must be original and unpublished. Please work on the abstract according to the provided template in the IPFA webpage. Only electronic submissions in PDF format will be accepted.

Please limit your submission file size to 5 MB and submit your abstract through the IPFA Website by 1 March 2021. For further details, please contact the Technical Program Chair / Co-Chair (details provided below).

Authors of papers that have been accepted for oral / poster presentation will be notified by 30 April 2021. High quality papers presented at IPFA 2021 will be invited to submit an extended version of their work for the Special Issue of Microelectronics Reliability journal (Elsevier), expected to be published in early 2022, or as articles in EDFA magazine.



1 March 2021 15 March 2021                                                   Deadline of Abstract Submission

30 April 2021                                                                            Notification of Abstract Acceptance


Conference Chairman                                           

Nagarajan Raghavan

SUTD, Singapore


Conference Vice Chairman

Wardhana Sasangka

Facebook, Ireland


Technical Program Chair

Alfred Quah



Technical Program Co-Chair

Samuel Chef

NTU, Singapore


Conference Secretariat

Jasmine Leong

IEEE Singapore Section